PART |
Description |
Maker |
MRF282 MRF282S MRF282Z |
LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
|
MOTOROLA[Motorola, Inc]
|
UPF1080 |
Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS
|
CREE
|
MRF9210R3 |
880 MHz, 200 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
|
Freescale (Motorola)
|
MRF282 |
MRF282SR1, MRF282ZR1 2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
|
Motorola
|
MRF9045LR1 MRF9045LSR1 |
945 MHz, 45 W, 28 V Lateral N–Channel Broadband RF Power MOSFET RF POWER FIELD EFFECT TRANSISTORS
|
Freescale (Motorola) FREESCALE[Freescale Semiconductor, Inc]
|
MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc MOTOROLA
|
MRF18085A MRF18085AR3 MRF18085ALSR3 |
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs MRF18085A, MRF18085AR3, MRF18085ALSR3 GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
http:// MOTOROLA[Motorola, Inc]
|
MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|
MRF9180 MRF9180S |
MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETs 880 MHz 170 W 26 V LATERAL N-CHANNEL RF POWER MOSFETs 880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
|
MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 |
MRF5S21100HR3, MRF5S21100HSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs 2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|